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Boron nitride nanotube : ウィキペディア英語版 | Boron nitride nanotube
Boron nitride nanotubes (BNNTs) are a polymorph of boron nitride. They were predicted in 1994 and experimentally discovered in 1995. Structurally they are similar to the carbon nanotube, which are cylinders with sub-micrometer diameters and micrometer length, except that carbon atoms are alternately substituted by nitrogen and boron atoms. However, the properties of BN nanotubes are very different: whereas carbon nanotubes can be metallic or semiconducting depending on the rolling direction and radius, a BN nanotube is an electrical insulator with a bandgap of ~5.5 eV, basically independent of tube chirality and morphology. In addition, a layered BN structure is much more thermally and chemically stable than a graphitic carbon structure. ==Synthesis==
All well-established techniques of carbon nanotube growth, such as arc-discharge,〔 laser ablation and chemical vapor deposition, are used for mass-production of BN nanotubes at a tens of grams scale.〔 BN nanotubes can also be produced by ball milling of amorphous boron, mixed with a catalyst (iron powder), under NH3 atmosphere. Subsequent annealing at ~1100 °C in nitrogen flow transforms most of the product into BN.〔〔 A high-temperature high-pressure method is also suitable for BN nanotube synthesis.
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